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Samsung has announced a new, faster version of its LPDDR5X DRAM that runs at 10.7Gbps. This chip is over 11% faster than the LPDDR5T variant offered by its competitor SK Hynix. The new chip is produced on a 12nm class process, making it smaller and ideal for use in on-device AI applications.

According to YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, LPDDR DRAM is expected to have broader applications beyond mobile devices, including in PCs, accelerators, servers, and automobiles. Samsung is committed to innovation and collaboration with customers to deliver optimized products for the on-device AI era.

The 10.7Gbps LPDDR5X from Samsung offers increased performance by over 25% and capacity by more than 30% compared to LPDDR5. It also increases the single package capacity of mobile DRAM to 32GB. The LPDDR5X includes power-saving technologies that improve power efficiency by 25% and allow the chip to enter low-power mode for extended periods.

Samsung plans to start mass production of the 10.7Gbps LPDDR5X DRAM in the second half of the year upon successful verification with mobile application processor (AP) and mobile device providers. This advancement in memory technology is set to impact various industries and applications, further driving innovation and performance enhancements in the tech sector.

In conclusion, Samsung’s new faster version of its LPDDR5X DRAM offers increased performance and capacity compared to its competitors while also improving power efficiency. The chip’s smaller size makes it ideal for use in on-device AI applications. As demand for low-power, high-performance memory grows across various industries, Samsung’s commitment to innovation and collaboration with customers will continue to drive advancements in memory technology.

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