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A recent breakthrough by the researchers at the Chinese Academy of Sciences has opened up new possibilities for the use of lasers in the deep ultraviolet (DUV) spectrum. The researchers used a LBO crystal to achieve the highest power output for 193 and 221 nm lasers, which is significant for various fields that rely on high-power DUV lasers.

Lasers in the DUV spectrum are already used in areas like defect inspection, spectroscopy, lithography, and metrology. However, until now, the ArgonFluoride (ArF) laser has been the go-to option for generating high-power 193 nm lasers for applications like lithography. With this new achievement by the Chinese Academy of Sciences researchers, LBO crystals may present a viable alternative for achieving even higher power output in the DUV spectrum.

This breakthrough could lead to advancements in existing DUV applications and enable new possibilities in the field. For example, higher power output could improve defect inspection and spectroscopy capabilities, allowing for more precise analysis of materials. In lithography, higher power output could enable smaller feature sizes and more complex designs on semiconductor chips. In metrology, higher power output could improve accuracy and precision measurements in microfabrication processes.

Overall, this breakthrough by Chinese Academy of Sciences researchers represents a significant step forward in advancing DUV applications and enabling new possibilities in various fields.

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