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Tagore Technology’s Power Gallium Nitride (GaN) intellectual property (IP) portfolio has been recently acquired by GlobalFoundries (GF). This acquisition aims to provide a high-power density solution for sustainable and efficient power management, especially in data centers. The GaN technology is designed to push the boundaries of efficiency and performance in various power applications, including automotive and internet of things (IoT) systems.

With the addition of Tagore Technology to the GF India team, their tech capabilities, especially in emerging areas like GaN, will be enhanced. Jitendra Chaddah, GF’s vice president and India country head, expressed that they are excited about this acquisition and look forward to leveraging it to address the increasing power demands of data centers. Amitava Das, co-founder and chief operating officer of Tagore Technology, highlighted the rising demand for power-efficient semiconductors. He mentioned that their team is thrilled to join GF and focus on market-leading IP to address power design challenges effectively.

As part of the acquisition, a team of experienced engineers from Tagore dedicated to the development of GaN technology will be joining GF. In February 2024, GF was awarded US$1.5 billion (S$2 billion) in direct funding under the US CHIPS and Science Act. Part of this investment is aimed at enabling high-volume manufacturing of critical technologies, including GaN, to produce essential chips securely.

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